| PART |
Description |
Maker |
| 3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
|
General Electric Solid State
|
| 3N187 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
|
VAISH[Vaishali Semiconductor]
|
| MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
IGBT 0.5 A @ 25 600 V
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| GT40T301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| GT40T302 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| GT60M322 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| GT50G321 |
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| GT60M323 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| GT25G101SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
